Boron induced charge traps near the interface of Si/SiO2 probed by second harmonic generation
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چکیده
Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, USA Department of Chemical and Biomolecular Engineering, Nashville, Vanderbilt University, Tennessee 37235, USA Department of Applied Science, College of William and Mary, Williamsburg, Virginia 23187, USA National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA Zomega Terahertz Corporation, Troy, New York 12180, USA
منابع مشابه
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تاریخ انتشار 2010